3D NIR TOMOGRAPHY
Revolutionary Inspection Solution For The Semiconductor/Panel Industry
Product Features
3D Imaging
A single scan can obtain the 3D structure under the surface, including six sides, inner layer inspection, and provide XY, XZ, YZ, and 3D images from different viewing angles for defect detection.
High image resolution capability
The switchable magnification design combines high-speed and high-precision detection capabilities. High-precision defect detection can reach up to 1.2 μm/pixel.
Inner layer Inspection
Defects detection of whole wafer after cutting, including side collapses, hidden collapses, internal cracks, scratches, and air bubbles. No need for media or grains removal before inspection.
Wafer 3D comprehensive inspection
Supports inspection for wafers up to 12 inches in diameter, eliminating concerns about sampling inspection. This increases efficiency by reducing both false negatives and false positives.
High optical penetration capability
Equipped with optimal optical resolution penetration, the imaging depth range can reach 2 mm, suitable for detecting multilayered sample structures.
Single-shot multilayered imaging
One-shot imaging captures different depths for flat structure images, presenting real-time views and 3D images from various perspectives.
AI-assisted defects identification
Customized automatic recognition software effectively distinguishes different types of defects and allows users to define their own defect filtering criteria.
Product Specifications
Centre Wavelength | 1310 |
Magnification factor (Objective lens) | 5x · 20x |
Frame rate (Max.) | 800 frames/sec · 200 frames/sec |
Axial Pixel resolution (in air) | 7 μm |
Transverse Pixel resolution (Max.) *1 | 11.25 μm · 1.2 μm |
Scanning range (Max.) *2 | 4.5*4.5 mm2 · 1.2*1.2 mm2 |
Imaging range*3 | 2 mm |
Software functions | Real-time image acquisition, processing and display engine Example scanning time : 0.5 sec@4.5 mm*4.5mm/5 sec@ 1.2mm*1.2mm 2D preview (xz), 2D/3D imaging |
*1 Customization service *2 Single FOV *3 Dependent on the optical properties of sample |